? semiconductor components industries, llc, 2013 may, 2013 ? rev. 5 1 publication order number: mjb44h11/d mjb44h11 (npn), njvmjb44h11 (npn), mjb45h11 (pnp), njvmjb45h11 (pnp) complementary power transistors d 2 pak for surface mount complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. features ? low collector ? emitter saturation voltage ? v ce(sat) = 1.0 v (max) @ 8.0 a ? fast switching speeds ? complementary pairs simplifies designs ? epoxy meets ul 94 v ? 0 @ 0.125 in ? esd ratings: human body model, 3b > 8000 v machine model, c > 400 v ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? pb ? free packages are available maximum ratings rating symbol value unit collector ? emitter voltage v ceo 80 vdc emitter ? base voltage v eb 5 vdc collector current ? continuous ? peak i c 10 20 adc total power dissipation @ t c = 25 c derate above 25 c p d 50 0.4 w w/ c total power dissipation @ t a = 25 c derate above 25 c p d 2.0 0.016 w w/ c operating and storage junction temperature range t j , t stg ? 55 to 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 2.5 c/w thermal resistance, junction ? to ? ambient r ja 75 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. device package shipping ? ordering information marking diagram silicon power transistors 10 amperes, 80 volts, 50 watts x = 4 or 5 a = assembly location y = year ww = work week g = pb ? free package http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. mjb45h11t4g d 2 pak (pb ? free) 800/tape & reel mjb45h11g d 2 pak (pb ? free) 50 units/rail mjb44h11t4g d 2 pak (pb ? free) 800/tape & reel mjb44h11g d 2 pak (pb ? free) 50 units/rail d 2 pak case 418b style 1 b4xh11g ayww NJVMJB44H11T4G d 2 pak (pb ? free) 800/tape & reel njvmjb45h11t4g d 2 pak (pb ? free) 800/tape & reel
mjb44h11 (npn), njvmjb44h11 (npn), mjb45h11 (pnp), njvmjb45h11 (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 30 ma, i b = 0) v ceo(sus) 80 ? ? vdc collector cutoff current (v ce = rated v ceo , v be = 0) i ces ? ? 10 a emitter cutoff current (v eb = 5 vdc) i ebo ? ? 50 a on characteristics collector ? emitter saturation voltage (i c = 8 adc, i b = 0.4 adc) v ce(sat) ? ? 1.0 vdc base ? emitter saturation voltage (i c = 8 adc, i b = 0.8 adc) v be(sat) ? ? 1.5 vdc dc current gain (v ce = 1 vdc, i c = 2 adc) h fe 60 ? ? ? dc current gain (v ce = 1 vdc, i c = 4 adc) 40 ? ? dynamic characteristics collector capacitance (v cb = 10 vdc, f test = 1 mhz) mjb44h11, njvmjb44h11 mjb45h11, njvmjb45h11 c cb ? ? 130 230 ? ? pf gain bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 20 mhz) mjb44h11, njvmjb44h11 mjb45h11, njvmjb45h11 f t ? ? 50 40 ? ? mhz switching times delay and rise times(i c = 5 adc, i b1 = 0.5 adc) mjb44h11, njvmjb44h11 mjb45h11, njvmjb45h11 t d + t r ? ? 300 135 ? ? ns storage time(i c = 5 adc, i b1 = i b2 = 0.5 adc) mjb44h11, njvmjb44h11 mjb45h11, njvmjb45h11 t s ? ? 500 500 ? ? ns fall time(i c = 5 adc, i b1 = i b2 = 0.5 adc) mjb44h11, njvmjb44h11 mjb45h11, njvmjb45h11 t f ? ? 140 100 ? ? ns figure 1. thermal response t, time (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal z jc(t) = r(t) r jc r jc = 1.56 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01
mjb44h11 (npn), njvmjb44h11 (npn), mjb45h11 (pnp), njvmjb45h11 (pnp) http://onsemi.com 3 figure 2. maximum rated forward bias safe operating area 100 1.0 v ce , collector-emitter voltage (volts) 5.0 10 t c 70 c duty cycle 50% i c , collector current (amps) 2.0 3.0 20 30 50 100 1.0 7.0 70 1.0 s dc 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 20 30 50 10 s 100 s 1.0 ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 1. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 3. power derating 0 t, temperature ( c) 0 40 60 100 120 160 40 t c 20 60 p d , power dissipation (watts) 0 2.0 t a 1.0 3.0 80 140 t c t a 20
mjb44h11 (npn), njvmjb44h11 (npn), mjb45h11 (pnp), njvmjb45h11 (pnp) http://onsemi.com 4 i c , collector current (amps) i c , collector current (amps) i c , collector current (amps) h fe , dc current gain v ce = 4 v t j = 125 c 25 c -40 c 1000 0.1 figure 4. mjb44h11 dc current gain 10 110 100 figure 5. mjb45h11 dc current gain figure 6. mjb44h11 current gain versus temperature figure 7. mjb45h11 current gain versus temperature i c /i b = 10 t j = 25 c 0.1 figure 8. mjb44h11 on ? voltages i c , collector current (amps) 1 0.8 saturation voltage (volts) 1.2 0.4 0 0.6 0.2 110 t j = 25 c figure 9. mjb45h11 on ? voltages v ce = 1 v i c /i b = 10 t j = 25 c 0.1 i c , collector current (amps) 1 0.8 saturation voltage (volts) 1.2 0.4 0 0.6 0.2 110 h fe , dc current gain 1000 0.1 10 110 100 v ce = 1 v i c , collector current (amps) h fe , dc current gain v ce = 4 v 1000 0.1 10 110 100 t j = 25 c 1 v t j = 125 c 25 c -40 c h fe , dc current gain 1000 0.1 10 110 100 v ce = 1 v v be(sat) v ce(sat) v be(sat) v ce(sat)
mjb44h11 (npn), njvmjb44h11 (npn), mjb45h11 (pnp), njvmjb45h11 (pnp) http://onsemi.com 5 package dimensions seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 d 2 pak 3 case 418b ? 04 issue k style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
mjb44h11 (npn), njvmjb44h11 (npn), mjb45h11 (pnp), njvmjb45h11 (pnp) http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mjb44h11/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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